SHANGHAI FAMOUS TRADE CO.,LTD

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Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)

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Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)

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Brand Name :ZMSH
Place of Origin :China
MOQ :1
Price :by case
Payment Terms :T/T
Supply Ability :By case
Delivery Time :2-4 weeks
Packaging Details :custom cartons
Max Temperature of Application :1380 ℃
Density :3.04–3.08 g/cm³
Open Porosity :<0.1 %
Bending Strength :250 (20℃) / 280 (1200℃) MPa
Modulus of Elasticity :330 (20℃) / 300 (1200℃) GPa
Thermal Conductivity :45 (1200℃)W/m·K
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Product Overview

The silicon carbide (SiC) cantilever paddle is a critical component made from reaction-bonded silicon carbide (RB-SiC). Designed with a cantilever structure, it offers outstanding high-temperature stability, corrosion resistance, and load-bearing capacity, making it an ideal choice for semiconductor diffusion furnaces, LPCVD systems, photovoltaic applications, and corrosive chemical environments.

Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle) Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)


Key Features

  1. Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)High-Temperature Stability – No deformation under high temperatures (up to 1380 °C), ensuring reliable wafer handling.

  2. Strong Load Capacity – Stable cross-section allows safe support of large-diameter wafers, compatible with existing furnace tubes for larger wafer sizes.

  3. LPCVD Compatibility – Very low thermal expansion coefficient, closely matching LPCVD coatings, extending maintenance and cleaning cycles while reducing contamination.

  4. Durability – Excellent resistance to extreme hot/cold thermal shock, significantly extending service life.

  5. High Purity – Free of metallic contamination, meeting the stringent purity requirements of semiconductor and photovoltaic industries.


Technical Parameters

Item Unit Data
Max Temperature of Application 1380
Density g/cm³ 3.04–3.08
Open Porosity % <0.1
Bending Strength MPa 250 (20℃) / 280 (1200℃)
Modulus of Elasticity GPa 330 (20℃) / 300 (1200℃)
Thermal Conductivity W/m·K 45 (1200℃)
Coefficient of Thermal Expansion K⁻¹×10⁻⁶ 4.5
Hardness (Vickers) HV2 ≥2100
Acid/Alkaline Resistance Excellent

  • Standard sizes: 2378 mm, 2550 mm, 2660 mm

  • Custom dimensions available upon request


Typical Applications

  • Semiconductor Industry: Wafer loading, handling, and transportation during diffusion, oxidation, nitridation, and LPCVD processes.

  • Photovoltaics: Carrier paddles for polycrystalline and monocrystalline wafers in high-temperature coating and diffusion steps (1000–1300 °C).

  • Chemical Industry: Corrosion-resistant stirring and circulation in highly aggressive environments.

Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle) Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)


FAQ – Silicon Carbide Cantilever Paddle

1. What is the maximum operating temperature?

The maximum working temperature is 1380 °C. It can operate reliably in diffusion and LPCVD processes between 1000–1300 °C.

2. Why is it better than metal paddles for semiconductor and photovoltaic processes?

  • Metal paddles tend to oxidize or deform at high temperatures.

  • SiC provides high hardness, low thermal expansion, and excellent corrosion resistance.

  • It does not release metallic ions, preventing wafer contamination.

3. Can it be used for large wafers (12-inch and above)?

Yes. The cantilever paddle’s stable cross-section allows it to safely support larger wafers, even in existing furnace tubes.

4. Is it compatible with LPCVD coatings?

Yes. Its thermal expansion coefficient (4.5×10⁻⁶ K⁻¹) closely matches LPCVD coatings, minimizing thermal stress and reducing coating delamination risk.

5. Are custom dimensions available?

Yes. Standard lengths are 2378 mm, 2550 mm, and 2660 mm, with other dimensions available upon request.

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