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LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​

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LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​

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Model Number :2”/3”/4”/6“/8”
Place of Origin :China
MOQ :2
Payment Terms :T/T
Delivery Time :2-3 weeks
Brand Name :ZMSH
Price :200 USD
Supply Ability :by case
Packaging Details :custom cartons
Material :LiNbO3
Diameter/size :2”/3”/4”/6“/8”
Cutting Angle :X/Y/Z etc
TTV :<3μm
Bow :-30
Warp :<40μm
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LNOI Wafer (Lithium Niobate on Insulator)2/3/4/6/8 Inch Si/LN Substrate

Introduction of LNOI Wafer
LNOI (Lithium Niobate on Insulator) wafers are a cutting-edge material used in the development of advanced photonic and quantum devices. These wafers are fabricated by bonding a thin layer of lithium niobate (LiNbO₃) onto an insulating substrate, typically silicon, through specialized processes like ion implantation and wafer bonding. LNOI wafers inherit the exceptional optical and piezoelectric properties of lithium niobate, making them indispensable for high-performance applications in integrated optics, telecommunications, and quantum technologies. This article explores the fundamental principles, key applications, and frequently asked questions about LNOI wafers.

LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​


Principle of LNOI Wafer Fabrication:
The process of creating LNOI wafers is complex and involves several critical steps to ensure the final product’s high quality and functionality. Here’s a breakdown of the key stages:

LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​

  1. Ion Implantation:
    The fabrication process starts with a bulk lithium niobate crystal. High-energy helium (He) ions are implanted into the surface of the crystal. The energy and depth of the ions determine the thickness of the lithium niobate layer. This ion implantation creates a fragile plane within the crystal, which can be separated during later stages of the process to yield a thin, high-quality lithium niobate film.

  2. Bonding to Substrate:
    Once the ion implantation process is complete, the lithium niobate layer (which has been weakened by the ions) is bonded to an insulating substrate, typically silicon. This is done using direct wafer bonding techniques, where the surfaces are pressed together at high pressure and temperature. The resulting bond forms a stable interface between the thin lithium niobate layer and the supporting substrate.

  3. Annealing and Layer Separation:
    After bonding, the wafer undergoes an annealing process, which helps to repair any damage caused by the ion implantation. The annealing step also promotes the separation of the top layer of lithium niobate from the bulk crystal. This results in a high-quality thin lithium niobate layer on the substrate, which is essential for its use in various photonic and quantum applications.

  4. Chemical Mechanical Polishing (CMP):
    To achieve the desired surface quality and flatness, the wafer undergoes Chemical Mechanical Polishing (CMP). CMP smooths out any roughness on the surface, ensuring that the final wafer meets the stringent requirements for use in high-performance photonic devices. This step is critical for ensuring optimal optical performance and reducing defects.


Specification of LNOI Wafer

Material Optical Grade LiNbO3 wafers
Curie Temp 1142±0.7℃
Cutting Angle X/Y/Z etc
Diameter/size 2”/3”/4”/6"/8”
Tol(±) <0.20 mm ±0.005mm
Thickness 0.18~0.5mm or more
Primary Flat 16mm/22mm/32mm
TTV <3μm
Bow -30<bow<30
Warp <40μm
Orientation Flat All available
Surface Type Single Side Polished(SSP)/Double Sides Polished(DSP)
Polished side Ra <0.5nm
S/D 20/10
Edge Criteria R=0.2mm C-type or Bullnose
Quality Free of crack(bubbles and inclusions)
Optical doped Mg/Fe/Zn/MgO etc for optical grade LN< wafers per requested
Wafer Surface Criteria Refractive index No=2.2878/Ne=2.2033 @632nm wavelength/prism coupler method.
Contamination, None
Particles c>0.3μ m <=30
Scratch,Chipping None
Defect No edge cracks,scratches,saw marks,stains
Packaging Qty/Wafer box 25pcs per box


Applications of LNOI Wafers:
LNOI wafers are used in various fields, particularly those requiring advanced material properties for photonic, quantum, and high-speed applications. Below are the key areas where LNOI wafers are indispensable:

LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​

  1. Integrated Optics:
    LNOI wafers are widely used in integrated optics, where they serve as the foundation for photonic devices such as modulators, waveguides, and resonators. These devices are crucial for manipulating light at the integrated circuit level, enabling high-speed data transmission, signal processing, and advanced optical applications.

  2. Telecommunications:
    LNOI wafers play a vital role in telecommunications, particularly in optical communication systems. They are used to create optical modulators, which are essential components for high-speed fiber-optic networks. LNOI’s exceptional electro-optic properties allow for precise light modulation at high frequencies, which is essential for modern communication systems.

  3. Quantum Computing:
    LNOI wafers are an ideal material for quantum technologies due to their ability to generate entangled photon pairs, which are essential for quantum key distribution (QKD) and quantum cryptography. Their integration into quantum computing systems allows for the development of advanced photonic circuits, which are critical for the future of quantum computing and communication technologies.

  4. Sensing Technologies:
    LNOI wafers are also used in optical and acoustic sensing applications. The wafers’ ability to interact with both light and sound makes them valuable for sensors used in medical diagnostics, environmental monitoring, and industrial testing. Their high sensitivity and stability ensure accurate measurements, making them essential in these fields.


FAQ of LNOI Wafer

  1. What are LNOI wafers made of?
    LNOI wafers consist of a thin layer of lithium niobate (LiNbO₃) bonded to an insulating substrate, typically silicon. The lithium niobate layer provides excellent optical and piezoelectric properties, making it ideal for various high-performance applications.

  2. How are LNOI wafers different from SOI wafers?
    While both LNOI and SOI wafers consist of a thin film bonded to an insulating substrate, LNOI uses lithium niobate as the thin film material, whereas SOI wafers use silicon. Lithium niobate offers superior nonlinear optical properties, which make LNOI wafers more suitable for applications like quantum computing and advanced photonics.

  3. What are the primary benefits of using LNOI wafers?
    The primary benefits of LNOI wafers include their high electro-optic coefficients, which enable efficient light modulation, as well as their mechanical strength, which ensures stability during device operation. These properties make LNOI wafers ideal for high-speed optical and quantum applications.

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