Wafer bonder equipment Room Temperature Bonding、Hydrophilic Bonding for 4 6 8 12inch SiC-Si SiC-SiC

Wafer bonder equipment Room Temperature Bonding,Hydrophilic Bonding for 4 6 8 12inch SiC-Si SiC-SiC

Wafer bonder equipment’s abstract

This wafer bonder is designed for high-precision bonding of silicon carbide (SiC) wafers, supporting both room temperature bonding and hydrophilic bonding techniques. It is capable of handling wafers of 4-inch, 6-inch, 8-inch, and 12-inch sizes, and is optimized for SiC-to-Si and SiC-to-SiC bonding applications. With advanced alignment systems and precise temperature and pressure control, this equipment ensures high yield and excellent uniformity for power semiconductor manufacturing and research applications.

Wafer bonder equipment’s property

• Bonding Types: Room Temperature Bonding, Hydrophilic Bonding

• Wafer Sizes Supported: 4", 6", 8", 12"

• Bonding Materials: SiC-Si, SiC-SiC

• Alignment Accuracy: ≤ ±1 µm

• Bonding Pressure: 0–5 MPa adjustable

• Temperature Range: Room temp up to 400°C (for pre/post treatment if needed)

• Vacuum Chamber: High vacuum environment for particle-free bonding

• User Interface: Touchscreen interface with programmable recipes

• Automation: Optional automatic wafer loading/unloading

• Safety Features: Enclosed chamber, overheat protection, emergency stop

The wafer bonder equipment is engineered to support high-precision bonding processes for advanced semiconductor materials, particularly for SiC-to-SiC and SiC-to-Si bonding. It accommodates wafer sizes up to 12 inches, with compatibility for 4", 6", and 8" wafers as well. The system supports room temperature and hydrophilic bonding, making it ideal for thermally sensitive applications. Featuring a high-accuracy optical alignment system with sub-micron precision, it ensures consistent bonding across the wafer surface. The equipment includes a programmable control interface with recipe management, allowing users to tailor bonding pressure, duration, and optional heating profiles. A high-vacuum chamber design minimizes particle contamination and improves bonding quality, while safety features such as over-temperature protection, interlocks, and emergency shutdown ensure stable and secure operation. Its modular design also enables integration with automated wafer handling systems for high-throughput production environments.

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Compatible Materials

Real Case --6inch SiC-SiC

(Main Process Steps for 6-Inch SiC-to-SiC Wafer Bonding Manufacturing)

(Cross-sectional High-Resolution Transmission Electron Microscopy (HRTEM) of the SiC MOSFET Channel Region Fabricated on a 6-Inch Engineered Substrate with Epitaxial Layer)

(IGSS Distribution Maps of Devices Fabricated on a 6-Inch Wafer (Green Indicates Pass; Yield is 90% in Figure a and 70% in Figure b))

Application

• SiC power device packaging

• Research & development of wide bandgap semiconductors

• High-temperature, high-frequency electronic module assembly

• MEMS and sensor wafer-level packaging

• Hybrid wafer integration involving Si, sapphire, or diamond substrates

Q&A

Q1: What’s the main advantage of bonding SiC at room temperature?
A: It avoids thermal stress and material deformation, crucial for brittle or mismatched thermal expansion substrates like SiC.

Q2: Can this equipment be used for temporary bonding?
A: While this unit specializes in permanent bonding, a variant with temporary bonding functionality is available upon request.

Q3: How do you ensure alignment for high-precision wafers?
A: The system uses optical alignment with sub-micron resolution and auto-correction algorithms.