SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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12 inch SiC Wafer 300mm Silicon Carbide wafer Conductive Dummy Grade N-Type Research grade
Abstract
Silicon carbide (SiC), as a third-generation wide-bandgap semiconductor material, offers superior properties such as high breakdown field strength (>30 MV/cm), excellent thermal conductivity (>1,500 W/m·K), and high electron mobility. These attributes make SiC critical for advanced applications in 5G, electric vehicles (EVs), and renewable energy. As the industry shifts toward mass production, the adoption of 12-inch SiC wafers (also known as 300mm SiC wafers) plays a crucial role in scaling up output and reducing costs. The transition to large-diameter SiC wafers not only supports higher device yields and improved performance but also enables a 15%-20% annual cost reduction (per Yole data), accelerating the commercialization of SiC-based solutions.
Key Advantages:
Our company, ZMSH, has been a prominent player in the semiconductor industry for over a decade, boasting a professional team of factory experts and sales personnel. We specialize in providing customized sapphire wafer and SiC wafer solutions, including 12inch SiC wafers and 300mm SiC wafers, to meet diverse client needs across high-tech sectors. Whether it’s tailored designs or OEM services, ZMSH is equipped to deliver high-quality SiC wafer products with competitive pricing and reliable performance. We are committed to ensuring customer satisfaction at every stage and invite you to contact us for more information or to discuss your specific requirements.
Silicon wafer Tecnical Parameters
| Parameter | Specification | Typical Value | Notes |
|---|---|---|---|
| Diameter | 300 mm ± 50 μm | SEMI M10 Standard | Compatible with ASML, AMAT, and epitaxial tools |
| Crystal Type | 6H-SiC (Primary) / 4H-SiC | - | 6H dominates high-frequency/high-voltage apps |
| Doping Type | N-type/P-type | N-type (1-5 mΩ·cm) | P-type: 50-200 mΩ·cm (specialized uses) |
| Thickness | 1000 μm (standard) | 1020 μm | Thinning options down to 100 μm (MEMS) |
| Surface Quality | RCA Standard Cleanliness | ≤50 Å RMS | Suitable for MOCVD epitaxial growth |
| Defect Density | Micropipes/Dislocations | <1,000 cm⁻² | Laser annealing reduces defects (yield >85%) |
SiC Wafer Applications
1. Electric Vehicles
12inch SiC-based power devices revolutionize EV design by addressing key limitations of silicon:
2. Renewable Energy
300 mm SiC technology accelerates the adoption of solar and wind energy:
3. 5G and Telecommunications
300mm SiC addresses critical challenges in 5G network deployment:
4. Industrial and Consumer Electronics
SiC drives innovation across diverse sectors:
Product Display - ZMSH
Q: How does 12inch SiC compare to silicon in long-term reliability?
A: 12inch SiC’s high-temperature stability and radiation resistance make it more durable in harsh environments (e.g., EVs, aerospace). We support customers with AEC-Q101 certification and accelerated aging tests to ensure compliance with stringent reliability standards.
Q: What are the main challenges in adopting SiC technology today?
A: While SiC offers superior performance, cost and maturity remain barriers for mass adoption. However, industry trends show yearly cost reductions of 15%-20% (Yole data) and rising demand from automakers and renewables are accelerating adoption. Our solutions address these challenges through scaled production and proven reliability validation.
Q: Can SiC integrate with existing silicon-based systems?
A: Yes! SiC devices use compatible packaging (e.g., TO-247) and pin configurations, enabling seamless upgrades. However, optimized gate-drive designs are required to fully leverage SiC’s high-frequency benefits.