SiC Furnace PVT Lely TSSG & LPE Crystal Growth Systems For Silicon Carbide Production

SiC Furnace: PVT, Lely, TSSG & LPE Crystal Growth Systems for High-Quality Silicon Carbide Production

Silicon Carbide Crystal Growth Furnace's Abstract

We offer a full range of Silicon Carbide (SiC) Crystal Growth Furnaces, including PVT (Physical Vapor Transport), Lely (Induction Method), and TSSG/LPE (Liquid Phase Growth) technologies.

Our PVT furnaces provide high-quality SiC crystals with precise temperature control, ideal for semiconductors. Lely furnaces utilize electromagnetic induction heating for large-size SiC crystal growth with excellent uniformity and minimal defects. TSSG/LPE furnaces specialize in producing ultra-pure SiC crystals and epitaxial layers for advanced power and optoelectronic devices.

Backed by advanced automation, precision systems, and robust designs, our furnaces meet diverse industrial and research needs. We deliver reliable, high-performance solutions for SiC crystal growth to support cutting-edge applications in high-tech materials manufacturing.

Silicon Carbide Crystal Growth Furnace's Properties

1. PVT Method (Physical Vapor Transport)

• Principle: Utilizes resistive heating to sublimate SiC source material, which then condenses on a seed crystal to form SiC crystals.

• Application: Mainly for producing semiconductor-grade SiC single crystals.

• Advantages:
  • Cost-effective production.
  • Well-suited for medium-scale crystal growth.

• Key Features:
  • Employs high-purity graphite components like crucibles and seed holders.
  • Advanced temperature control via thermocouples and infrared sensors.
  • Vacuum and inert gas flow systems ensure a controlled atmosphere.
  • Automated PLC systems enhance precision and repeatability.
  • Integrated cooling and waste gas treatment systems maintain process stability.

2. Lely Method (Induction Heating)

• Principle: Uses high-frequency electromagnetic induction to heat the crucible and sublimate SiC powder for crystal growth.

• Application: Ideal for large-size SiC crystal growth due to superior temperature uniformity.

• Advantages:
  • High thermal efficiency and uniform heating.
  • Reduces crystal defects during growth.

• Key Features:
  • Equipped with copper induction coils and SiC-coated crucibles.
  • Features high-temperature vacuum chambers for stable operation.
  • Precise control of temperature and gas flow.
  • PLC and remote monitoring systems for enhanced automation.
  • Efficient cooling and exhaust systems for safety and reliability.

3. TSSG/LPE Method (Liquid Phase Growth)

• Principle: Dissolves SiC in a high-temperature molten metal and grows crystals via controlled cooling (TSSG) or deposits SiC layers onto a substrate (LPE).

• Application: Produces ultra-high-purity SiC crystals and epitaxial layers for power and optoelectronics.

• Advantages:
  • Low defect density and high-quality crystal growth.
  • Suitable for both bulk crystals and thin-film deposition.

• Key Features:
  • Uses SiC-compatible crucibles (e.g., graphite or tantalum).
  • Offers precise heating systems for temperatures up to 2100°C.
  • Highly controlled rotation/positioning mechanisms for uniform growth.
  • Automated process control and efficient cooling systems.
  • Adaptable to various applications, including high-power electronics.

Silicon Carbide Crystal Growth Furnace's photos

Our servise

1. Tailored One-Stop Solutions
   We provide customized Silicon Carbide (SiC) furnace solutions, including PVT, Lely, and TSSG/LPE technologies, tailored to meet your specific needs. From design to optimization, we ensure our systems align with your production goals.
   

2. Client Training
   We offer comprehensive training to ensure your team fully understands how to operate and maintain our furnaces. Our training covers everything from basic operations to advanced troubleshooting.
   

3. On-Site Installation and Commissioning
   Our team personally installs and commissions the SiC furnaces at your location. We ensure smooth setup and conduct a thorough verification process to guarantee the system is fully operational.
   

4. After-Sales Support
   We provide responsive after-sales service. Our team is ready to assist with on-site repairs and troubleshooting to minimize downtime and keep your equipment running smoothly.
   

We are dedicated to offering high-quality furnaces and continuous support to ensure your success in SiC crystal growth.

Q&A

Q:What is the physical vapor transport method of PVT?

A:The Physical Vapor Transport (PVT) method is a technique used for growing high-quality crystals, especially for materials like Silicon Carbide (SiC). In PVT, a solid material is heated in a vacuum or low-pressure environment to sublimate it (convert it directly from a solid to a vapor), which then travels through the system and deposits as a crystal on a cooler substrate.

Q:What is the growth method of SiC?

A:Physical Vapor Transport (PVT)

PVT involves heating SiC material in a vacuum to vaporize it, then allowing the vapor to deposit on a cooler substrate. This method produces high-quality, large SiC crystals ideal for semiconductors.

Chemical Vapor Deposition (CVD)

In CVD, gaseous precursors like silane and propane are introduced into a chamber where they react to form SiC on a substrate. It is used for producing thin films and bulk crystals.Lely Method (Induction Heating)

The Lely method uses induction heating to grow large SiC crystals. The vapor from heated SiC material condenses on a seed crystal.

Solution Growth (TSSG/LPE)

This method involves growing SiC from a molten solution. It produces ultra-pure crystals and epitaxial layers, ideal for high-performance devices.