SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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12 inch SiC wafer 4H-N Production-grade, Dummy-grade, Research-grade, and double-sided polished DSP, single-sided polished SSP substrates
Abstract of 12 inch SiC wafer
A 12-inch SiC wafer refers to a silicon carbide (SiC) wafer with a 12-inch diameter (approximately 300mm), a size standard used in the semiconductor industry for the mass production of semiconductor devices. These wafers are integral in various high-performance applications due to SiC’s unique properties, including high thermal conductivity, high breakdown voltage, and resistance to high temperatures. SiC wafers are a core material for manufacturing advanced semiconductor devices used in fields such as power electronics, electric vehicles, telecommunications, aerospace, and renewable energy.
Silicon carbide is a wide-bandgap semiconductor material, and its performance advantages over traditional silicon (Si) have made it a preferred choice in specific applications where silicon is no longer effective, particularly in high-power, high-temperature, and high-frequency environments.
1.Wide Bandgap Properties:
Silicon carbide has a wide bandgap of 3.26 eV, which is significantly higher than that of silicon (1.1 eV). This means SiC-based devices can operate at higher voltages, frequencies, and temperatures without breaking down or losing performance. This is critical for applications like power electronics and high-voltage devices where higher efficiency and thermal stability are needed.
2.High Thermal Conductivity:
SiC exhibits exceptional thermal conductivity (about 3.5 times higher than silicon), which is beneficial for heat dissipation. In power electronics and high-power devices, the ability to conduct heat efficiently is essential to prevent overheating and ensure long-term performance, especially when handling large amounts of power.
3.High Breakdown Voltage:
Due to the wide bandgap, SiC can withstand much higher voltages compared to silicon, making it suitable for use in high-voltage applications such as power conversion and transmission. SiC devices can handle up to 10 times the breakdown voltage of silicon-based devices, making them ideal for power electronics operating at elevated voltages.
4.Low On-Resistance:
SiC materials have a much lower on-resistance compared to silicon, which leads to higher efficiency, especially in power switching applications. This reduces energy loss and increases the overall efficiency of devices that use SiC wafers.
5.High Power Density:
The combination of high breakdown voltage, low on-resistance, and high thermal conductivity allows for the production of high-power density devices that can perform in extreme conditions with minimal losses.
The manufacturing of 12-inch SiC wafers follows several critical steps to produce high-quality wafers that meet the required specifications for use in semiconductor devices. Below are the key stages involved in SiC wafer production:
The production of SiC wafers begins with the growth of large single crystals. The most common method for growing SiC crystals is physical vapor transport (PVT), which involves sublimating silicon and carbon in a furnace, allowing them to re-deposit as high-purity crystals. Other methods, such as solution growth and chemical vapor deposition (CVD), may also be used, but PVT is the most widely adopted method for large-scale production.
The process requires high temperatures (around 2000°C) and precise control to ensure the crystal structure is uniform and free from defects.
Once a single crystal of SiC is grown, it is sliced into thin wafers using diamond-tipped saws or wire saws. This step is essential to obtain the initial thickness and diameter of the wafer. Wafers are typically sliced into thicknesses of around 300–350 microns.
After slicing, the wafers undergo polishing to achieve a smooth surface suitable for semiconductor applications. This step is crucial for reducing surface defects and ensuring a flat surface that is ideal for device fabrication. Chemical mechanical polishing (CMP) is often used to achieve the desired smoothness and remove any residual damage from slicing.
4.Doping:
To modify the electrical properties of SiC, doping is performed by introducing small amounts of other elements such as nitrogen, boron, or phosphorus. This process is essential for controlling the conductivity of the SiC wafer and creating p-type or n-type materials required for different types of semiconductor devices.
After doping, the wafers undergo a thorough cleaning process to remove any remaining particles, organic residues, or contaminants. This step ensures that the wafers are free from any surface imperfections or contamination that could affect the device’s performance.
Throughout the manufacturing process, quality control is essential. This includes testing for wafer flatness, surface roughness, crystal defects, and other critical factors that affect the wafer’s performance in semiconductor applications. Wafers are inspected using specialized tools, such as atomic force microscopy (AFM) and scanning electron microscopes (SEM), to ensure they meet the stringent requirements for power electronics and other high-performance applications.
The primary applications of 12-inch SiC wafers are found in industries where high efficiency, power handling, and thermal stability are required. Below are some of the key areas where SiC wafers are widely used:
SiC devices, particularly power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and diodes, are used in power electronics for high-voltage and high-power applications. These devices enable more efficient power conversion and energy management, especially in applications like:
The 12-inch SiC wafers allow manufacturers to produce a larger number of devices per wafer, which leads to more cost-effective solutions for the growing demand for power electronics.
The automotive industry, especially the electric vehicle (EV) sector, relies on SiC-based devices for efficient power conversion and charging systems. SiC wafers are used in the power modules of EV inverters, helping vehicles to operate more efficiently with faster charging times, higher performance, and extended range.
SiC power modules enable EVs to achieve better thermal performance and higher power density, allowing for lighter and more compact systems.
SiC wafers are crucial for high-frequency applications in the telecommunications industry. They are used in 5G base stations, radar systems, and other communication equipment, providing high power and low loss at higher frequencies. The high thermal conductivity and breakdown voltage of SiC enable these devices to operate in extreme conditions, such as in outer space or in highly sensitive radar systems.
SiC wafers are used in the aerospace and defense industries for high-performance electronics that must operate in high-temperature, high-voltage, and radiation environments. These include applications such as satellite systems, space exploration, and advanced radar systems.
In solar energy and wind energy systems, SiC devices are used in power converters and inverters to convert the power generated from renewable sources into usable electricity. The ability of SiC to handle high voltages and operate efficiently at high temperatures makes it ideal for these applications.
The use of 12-inch SiC wafers in semiconductor manufacturing provides several significant advantages:
1.Higher Efficiency:
SiC-based devices offer higher efficiency compared to silicon-based devices, especially in power conversion applications. This leads to reduced energy loss, which is crucial for industries like electric vehicles, renewable energy, and power grids.
2.Better Thermal Management:
The high thermal conductivity of SiC helps dissipate heat more effectively, allowing devices to perform at higher power levels without overheating. This results in more reliable and longer-lasting components.
3.Higher Power Density:
SiC devices can operate at higher voltages and frequencies, resulting in higher power density for power electronics. This allows for more compact designs, saving space and reducing system weight in applications like EVs and telecommunications.
4.Cost-Effectiveness:
Although SiC wafers are generally more expensive than traditional silicon wafers, the 12-inch size enables the production of more devices per wafer, reducing the overall cost per device when manufactured at scale.
5.Reliability and Longevity:
SiC’s durability in extreme conditions ensures that devices made from SiC wafers have a longer lifespan, especially in harsh environments like automotive, aerospace, and industrial applications.
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#SiC wafer #12 inch SiC wafer #4H-N SiC #4H-SiC #Silicon carbide wafer