SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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3C-N SiC wafer 4inch Silicon Carbide Prime Grade Dummy Grade High electron mobility RF LED
We can offer 4-inch 3C-N Silicon Carbide Wafers with N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with a diamond-like structure. It has several superior properties to the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.
The Character of 3C-N SiC Wafer:
1. Wide Bandgap
High Breakdown Voltage: 3C-N SiC wafers have a wide bandgap (~3.0 eV), enabling high voltage operation and making them suitable for power electronics.
2. High Thermal Conductivity
Efficient Heat Dissipation: With a thermal conductivity of about 3.0 W/cm·K, these wafers can effectively dissipate heat, allowing devices to operate at higher power levels without overheating.
3. High Electron Mobility
Enhanced Performance: The high electron mobility (~1000 cm²/V·s) leads to faster switching speeds, making 3C-N SiC ideal for high-frequency applications.
4. Mechanical Strength
Durability: 3C-N SiC wafers exhibit excellent mechanical properties, including high hardness and resistance to wear, which enhances their reliability in various applications.
5. Chemical Stability
Corrosion Resistance: The material is chemically stable and resistant to oxidation, making it suitable for harsh environments.
6. Low Leakage Currents
Efficiency: The low leakage current in devices fabricated from 3C-N SiC wafers contributes to improved efficiency in power electronics.
| Grade | Production Grade | Dummy Grade |
| Diameter | 100 mm +/- 0.5 mm | |
| Thickness | 350 um +/- 25 um | |
| Polytype | 3C | |
| Micropipe Density (MPD) | 5 cm-2 | 30 cm-2 |
| Electrical Resistivity | 0.0005~0.001 Ohm.cm | 0.001~0.0015 Ohm.cm |
Comparison of properties of SiC:
| Property | 4H-SiC Single Crystal | 3C-SiC Single Crystal |
| Lattice Parameters (Å) | a=3.076 c=10.053 | a=4.36 |
| Stacking Sequence | ABCB | ABC |
| Density (g/cm³) | 3.21 | 3.166 |
| Mohs Hardness | ~9.2 | ~9.2 |
| Thermal Expansion Coefficient (CTE) (/K) | 4-5 x 10-6 | 2.5-3.5 x10-6 |
| Dielectric Constant | c ~ 9.66 | c ~ 9.72 |
| Doping Type | N-type or Semi-insulating or P-type | N-type |
| Band-gap (eV) | 3.23 | 2.4 |
| Saturation Drift Velocity (m/s) | 2.0 x 105 | 2.5 x 105 |
| Wafer and Substrate Sizes | Wafers: 2, 4 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request | |
1. Power Electronics
High-Power Devices: Used in power MOSFETs and IGBTs due to their high breakdown voltage and thermal conductivity.
Switching Devices: Ideal for applications requiring high efficiency, such as DC-DC converters and inverters.
2. RF and Microwave Devices
High-Frequency Transistors: Utilized in RF amplifiers and microwave devices, benefiting from high electron mobility.
Radar and Communication Systems: Employed in satellite communications and radar technology for improved performance.
3. LED Technology
Blue and Ultraviolet LEDs: 3C-SiC can be used in the production of light-emitting diodes, particularly for blue and UV light applications.
4. High-Temperature Applications
Sensors: Suitable for high-temperature sensors used in automotive and industrial applications.
Aerospace: Utilized in components that must operate effectively in extreme environments.
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.
1.2 inch 3inch 4 inch 6 inch 8inch Sic Wafer 4H-N/Semi Type