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2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor

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2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor

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Brand Name :ZMSH
Model Number :Si wafer
Place of Origin :China
Orientation :<100> or <111>
Resistivity :1-10 ohm-cm (or as specified)
TTV :≤ 2µm
Bow :≤ 40µm
Warp :≤ 40µm
Particle Coun :≤ 50 @ ≥ 0.12µm
LTV :≤ 1µm (in 20mm x 20mm area)
Flatness (GBIR) :≤ 0.5µm (Global Backside Ideal Range)
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2inch 4inch 6inch 8inch 12inch Si wafer Silicon wafer Polishing Undoped P type N type Semiconductor

Description of Si Wafer:

Silicon wafer is a material used for producing semiconductors, which can be found in all types of electronic devices that improve the lives of people. Silicon comes second as the most common element in the universe; it is mostly used as a semiconductor in the technology and electronic sector. Most people have had the chance to encounter a real silicon wafer in their life. This super-flat disk is refined to a mirror-like surface. Besides, it is also made of subtle surface irregularities which make it the flattest object worldwide. It is also extremely clean and free of impurities and micro-particles, qualities that are essential in making it the perfect substrate material for modern semiconductors.

The Character of Si Wafer:
Young’s Modulus: Approximately 130-185 GPa, indicating the stiffness of the300mm Silicon wafer
Fracture Toughness: Silicon has a low fracture toughness, which means it is prone to cracking under stress.

Thermal Conductivity: Around 149 W/m·K at 300K, which is relatively high and beneficial for dissipating heat generated in electronic devices.
Thermal Expansion Coefficient: Approximately 2.6 x 10^-6 /K, indicating how much the wafer will expand with temperature changes.

Band Gap: Silicon has an indirect band gap of about 1.1 eV at room temperature, which is suitable for creating electronic devices like transistors.
Resistivity: Varies depending on doping; intrinsic silicon has a high resistivity (~10^3 Ω·cm), while doped silicon can have resistivities ranging from 10^-3 to 10^3 Ω·cm.
Dielectric Constant: Around 11.7 at 1 MHz, which affects the capacitance of devices made from silicon.

Chemical Stability: Silicon is chemically stable and resistant to most acids and alkalis at room temperature, except for hydrofluoric acid (HF).
Oxidation: Silicon forms a native oxide layer (SiO2) when exposed to oxygen at elevated temperatures, which is utilized in semiconductor device fabrication for insulating and protective layers.


Form of Si Wafer:

Parameter/FeatureDescription/Specification
Material TypeSingle-Crystal Silicon
Purity99.9999% (6N) or higher
Diameter2 inch, 3 inch, 4 inch, 6 inch, 8 inch, 12 inch, etc.
ThicknessStandard thickness or customized as per customer requirements
Crystal Orientation<100>, <111>, <110>, etc.
Orientation Tolerance±0.5° or more precise
Thickness Tolerance±5μm or more precise
Flatness≤1μm or better
Surface Roughness<0.5nm RMS or lower


Physical Photos of Si Wafer:

2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor

Application of Si Wafer:

1. Microchip production and integrated circuit fabrication
2. MEMS and microelectromechanical systems
3. Semiconductor and sensor manufacturing
4. LED lighting and laser diode creation
5. Solar/photovoltaic cells and wafers
6. Optical equipment components
7. R&D prototyping and testing

Application Pictures of Si Wafer:

2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor



Packing Picture of Si Wafer:
2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor

Customization:

We can customize the size, thickness and shape, including the following aspects:
Crystal Orientation: Common orientations for 300mm Silicon wafer include <100>, <110>, and <111>, each offering different electronic properties and advantages for various applications.
Dopants: 300mm Silicon wafer can be doped with elements such as phosphorus (n-type), boron (p-type), arsenic, and antimony to alter their electrical properties.
Doping Concentration: Can vary widely depending on the application, from very low concentrations (~10^13 atoms/cm^3) for high-resistivity wafers to very high concentrations (~10^20 atoms/cm^3) for low-resistivity wafers.

FAQ:

1.Q:What is a silicon wafer used for?
A:In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells.

2.Q:What is the difference between a silicon wafer and a chip?
A:While chips and wafers are typically used interchangeably in electronics, there are some notable differences between the two. One of the key differences is that a chip or integrated circuit is an assembly of electronics, while a wafer is a thin slice of silicon that is used for the formation of integrated circuits.

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