SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices.
Key features of the 4-H Semi-Insulating SiC substrate include highly uniform electrical properties, low impurity concentration, and outstanding thermal stability. These attributes make it suitable for the fabrication of high-frequency RF power devices, high-temperature electronic sensors, and microwave electronic equipment. Its high breakdown field strength and excellent thermal conductivity also position it as the preferred substrate for high-power devices.
Furthermore, the 4-H Semi-Insulating SiC substrate demonstrates excellent chemical stability, allowing it to operate in corrosive environments and expanding its range of applications. It plays a critical role in industries such as semiconductor manufacturing, telecommunications, defense, and high-energy physics experiments.
In summary, the 4-H Semi-Insulating SiC substrate, with its outstanding electrical and thermal properties, holds significant promise in the semiconductor field and provides a reliable foundation for the production of high-performance electronic devices.
| Polytype | Single Crystal 4H | ||
| Lattice Parameters | a=3.076 A C=10.053 A | ||
| Stacking Sequence | ABCB | ||
| Band-gap | 3.26 eV | ||
| Density | 3.21 10^3 kg/m^3 | ||
| Therm. Expansion Coefficient | 4-5x10^-6/K | ||
| Refraction Index | no = 2.719 ne = 2.777 | ||
| Dielectric Constant | 9.6 | ||
| Thermal Conductivity | 490 W/mK | ||
| Break-Down Electrical Field | 2-4 108 V/m | ||
| Saturation Drift Velocity | 2.0 105 m/s | ||
| Electron Mobility | 800 cm^2NS | ||
| hole Mobility | 115 cm^2N·S | ||
| Mohs Hardness | 9 |
4H Semi-Insulating SiC is a versatile material that is used in various high-performance applications due to its exceptional electrical, thermal, and physical properties.
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