
Add to Cart
Silicon Carbide (SiC) single crystal has excellent thermal conductivity properties, high saturation electron mobility, and high voltage breakdown resistance. It is suitable for preparing high frequency, high power, high temperature, and radiation-resistant electronic devices.
SiC single crystal has many excellent properties, including high thermal conductivity, high saturated electron mobility, and strong anti-voltage breakdown. Owing to these advantages, SiC single crystal is suitable for preparation of high frequency, high power, high temperature and radiation-resistant electronic devices.
Product Name: Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate.
Growth method: MOCVD.
Crystal Structure: 6H and 4H.
Lattice Parameters: 6H (a=3.073 Å, c=15.117 Å); 4H (a=3.076 Å, c=10.053 Å).
Stacking Sequence: 6H (ABCACB), 4H (ABCB).
Grade: Production Grade, Research Grade, Dummy Grade.
Conductivity type: N-type or Semi-Insulating.
Band-gap: 3.23 eV.
Hardness: 9.2 mohs.
Thermal Conductivity @300K: 3.2~4.9 W/ cm.K.
Dielectric constants: e(11) = e(22) = 9.66, e(33) = 10.33.
Resistivity: 4H-SiC-N (0.015~0.028 Ω·cm); 6H-SiC-N (0.02~0.1 Ω·cm); 4H/6H-SiC-SI (>1E7 Ω·cm).
Packing: Class 100 clean bag, in class 1000 clean room.
Silicon Carbide Wafer (SiC wafer), including 4H-N Type SiC substrate and Semi-Insulating SiC substrate, is a great choice for those in the automotive electronics, optoelectronic devices, and industrial application markets. This strong and resistant material is the ideal choice for use in such industrial scenarios where stability and durability are a must and it has become a favorite among many users.
The properties of SiC wafers, including its excellent semiconductor properties and superior temperature resistance, make it an ideal choice for automotive electronics. Its high temperature resistance also makes it ideal for use in some optoelectronic devices that require extraordinary performance under various temperature environments. Finally, its superior electrical and thermal conductivity make it perfect for industrial applications in places such as chemical plants, power plants, etc.
The superior properties of SiC wafer make it an ideal choice for a variety of applications. It is a great option for automotive electronics, optoelectronic devices, and even industrial applications. If you are looking for a superior material with superior properties, then the Silicon Carbide Wafer is the ideal choice for you.
Silicon Carbide Wafer offers a variety of technical support and services to ensure that our customers get the most out of their product. Our services include:
Silicon Carbide Wafers are typically packaged in a sealed, moisture-proof package to protect them from environmental conditions while they are shipped. They are usually shipped in a box or envelope with foam or bubble wrap to ensure the wafers are safe and secure during transit. The package should also be clearly labeled with the customer's name, address, and any other important information.