Single Crystal Monocrystal Semiconductor Substrate Indium Arsenide InAs Substrate

2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor
Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate
Single Crystal Semiconductor Substrate Indium Arsenide InAs wafer

Application
Indium Arsenide (InAs) single crystal semiconductor substrates are materials with unique properties, widely used in the electronics and optoelectronics fields. Here are some possible applications:

1. High-Performance Infrared Detectors

Due to its narrow bandgap, InAs substrates are ideal for manufacturing high-performance infrared detectors, particularly in the mid-infrared and long-wavelength infrared ranges. These detectors are essential in applications such as night vision, thermal imaging, and environmental monitoring.

2. Quantum Dot Technology

InAs is used in the fabrication of quantum dots, which are critical for developing advanced optoelectronic devices like quantum dot lasers, quantum computing systems, and high-efficiency solar cells. Its superior electron mobility and quantum confinement effects make it a prime candidate for next-generation semiconductor devices.

3. High-Speed Electronics

InAs substrates offer excellent electron mobility, making them suitable for high-speed electronics, such as high-frequency transistors (HEMTs) and high-speed integrated circuits used in telecommunications and radar systems.

4. Optoelectronic Devices

InAs is a popular material for fabricating optoelectronic devices, such as lasers and photodetectors, due to its direct bandgap and high electron mobility. These devices are critical for applications in fiber-optic communication, medical imaging, and spectroscopy.

5. Thermoelectric Devices

InAs's superior thermoelectric properties make it a promising candidate for thermoelectric generators and coolers, which are used to convert temperature gradients into electrical energy and for cooling applications in electronics.
In summary, InAs substrates play a crucial role in advanced technologies ranging from infrared detection to quantum computing and high-speed electronics, making them indispensable in modern semiconductor and optoelectronic applications.

InAs substrate

InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single crystal as the substrate, and an infrared light-emitting device with a wavelength of 2 to 14 μm can be fabricated. The AlGaSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate. Mid-infrared quantum cascade laser. These infrared devices have good application prospects in the fields of gas monitoring, low-loss fiber communication, etc. In addition, InAs single crystals have high electron mobility and are ideal materials for making Hall devices.

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing