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A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm

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A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm

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Brand Name :zmkj
Model Number :GaN-FS-M-N-S5*10-DSP
Place of Origin :CHINA
MOQ :10pcs
Price :1200~2500usd/pc
Payment Terms :T/T
Supply Ability :50pcs per month
Delivery Time :1-5weeks
Packaging Details :single wafer case by vacuum package
Material :GaN single crystal
size :10x10/5x5/5x10 mmt
thickness :0.35mm
type :N-type
Application :semiconductor Device
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

GaN Wafer Characteristic

Product Gallium nitride (GaN) substrates
Product Description:

Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process,

the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.

Technical parameters:
Size 2 "round; 50mm ± 2mm
Product Positioning C-axis <0001> ± 1.0.
Conductivity type N-type & P-type
Resistivity R <0.5Ohm-cm
Surface treatment (Ga face) AS Grown
RMS <1nm
Available surface area > 90%
Specifications:

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.

Standard Packaging: 1000 clean room, 100 clean bag or single box packaging

A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.
  • Date storage
  • Energy-efficient lighting
  • Full color fla display
  • Laser Projecttions
  • High- Efficiency Electronic devices
  • High- Frequency Microwave Devices
  • High-energy Detection and imagine
  • New energy solor hydrogen technology
  • Environment Detection and biological medicine
  • Light source terahertz band


A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm

Specifications:

Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
Item GaN-FS-a GaN-FS-m
Dimensions 5.0mm×5.5mm
5.0mm×10.0mm
5.0mm×20.0mm
Customized Size
Thickness 350 ± 25 µm
Orientation a-plane ± 1° m-plane ± 1°
TTV ≤15 µm
BOW ≤20 µm
Conduction Type N-type
Resistivity(300K) < 0.5 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm

A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm

FAQ

Q:What is your minimum order requirement?
A:MOQ:10 piece

Q:How long will it take to execute my order and delivery it ?
A:confirm the order 1days After confirming the payment and delivery in 5days if on stocks.

Q:Can you give warranty of your products ?
A:We promise the quality, if the quality has any problems, we will produce new produces or return you money.

Q:How to pay?
A:T/T, Paypal, West Union, bank transfer.

Q:HOW about the freight ?
A:we can help you pay for the fee if you don’t have account,

if the order is over 10000usd, we can delivery by CIF.

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