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VGF 6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

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Province/State:shanghai
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VGF 6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

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Brand Name :ZMSH
Model Number :S-C-N
Certification :ROHS
Place of Origin :CN
MOQ :3PCS
Price :BY case
Payment Terms :T/T, Western Union
Delivery Time :2-6weeks
Packaging Details :single wafer container under cleaning room
Material :GaAs crystal
orientation :100 2°off
size :6inch
growth method :VGF
thickness :675±25um
EPD :<500
Dopant :Si-doped
Shape :with Notch
TTV :10UM
bow :10um
surface :SSP
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VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth

GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market players to adopt these wafers, thereby increasing the demand for GaAs wafer. Generally, this wafer is used to manufacture semiconductors, light emitting diodes, thermometers, electronic circuits, and barometers, besides finding application in the manufacturing of low melting alloys. As the semiconductor and electronic circuit industries continue to touch new peaks, the GaAs market is booming. Gallium arsenide of GaAs wafer has the power of generating laser light from electricity. Especially polycrystalline and single crystal are the two major type of GaAs wafers, which are utilized in the production of both the microelectronics and optoelectronics to create LD, LED, and microwave circuits. Therefore, the extensive range of GaAs applications, particularly in optoelectronics and microelectronics industry is creating a demand influx in the GaAs Wafer Market. Previously, the optoelectronic devices were mainly used on a broad range in short-range optical communications and computer peripherals. But now, they are in demand for some emerging applications such as LiDAR, augmented reality, and face recognition. LEC and VGF are two popular methods which are improving the production of GaAs wafer with high uniformity of electrical properties and excellent surface quality. Electron mobility, single junction band-gap, higher efficiency, heat and moisture resistance, and superior flexibility are the five distinct advantages of GaAs, which are improving the acceptance of GaAs wafers in the semiconductor industry.

What we provide:

Item
Y/N
Item
Y/N
Item
Y/N
GaAs crystal
yes
Electronic Grade
yes
N type
yes
GaAs blank
yes
Infrared Grade
yes
P type
yes
GaAs substrate
yes
Cell Grade
yes
Undoped
yes
GaAs epi wafer
yes
Specification detail:
GaAs (Gallium Arsenide) for LED Applications
Item Specifications Remarks
Conduction Type SC/n-type  
Growth Method VGF  
Dopant Silicon  
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000 cm2/V.sec  
Etch Pit Density <500/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~350um  
Epitaxy Ready Yes  
Package Single wafer container or cassette  

GaAs (Gallium Arsenide) ,Semi-insulating for Microelectronics Applications

Item
Specifications
Remarks
Conduction Type
Insulating
 
Growth Method
VGF
 
Dopant
Undoped
 
Wafer Diamter
2, 3, 4 & 6 inch
Ingot available
Crystal Orientation
(100)+/- 0.5°
 
OF
EJ, US or notch
 
Carrier Concentration
n/a
 
Resistivity at RT
>1E7 Ohm.cm
 
Mobility
>5000 cm2/V.sec
 
Etch Pit Density
<8000 /cm2
 
Laser Marking
upon request
 
Surface Finish
P/P
 
Thickness
350~675um
 
Epitaxy Ready
Yes
 
Package
Single wafer container or cassette
 
No. Item Standard Specification
1 Size 2" 3" 4" 6"
2 Diameter mm 50.8±0.2 76.2±0.2 100±0.2 150±0.5
3 Growth Method VGF
4 Doped Un-doped, or Si-doped, or Zn-doped
5 Conductor Type N/A, or SC/N, or SC/P
6 Thickness μm (220-350)±20 or (350-675)±25
7 Crystal Orientation <100>±0.5 or 2 off
OF/IF Orientation Option EJ, US or Notch
Orientation Flat (OF) mm 16±1 22±1 32±1 -
Identification Flat (IF) mm 8±1 11±1 18±1 -
8 Resistivity (Not for
Mechanical
Grade)
Ω.cm (1-30)´107, or (0.8-9)´10-3, or 1´10-2-10-3
Mobility cm2/v.s 5,000, or 1,500-3,000
Carrier Concentration cm-3 (0.3-1.0)x1018, or (0.4-4.0)x1018,
or As SEMI
9 TTV μm ≤10
Bow μm ≤10
Warp μm ≤10
EPD cm-2 8,000 or ≤ 5,000
Front/Back Surface P/E, P/P
Edge Profile As SEMI
Particle Count <50 (size>0.3 μm,count/wafer),
or AS SEMI
10 Laser Mark Back side or upon request
11 Packaging Single wafer container or cassette

Package Detail:

VGF  6 Inch N Type GaAs Semiconductor Substrate For Epitaxial GrowthVGF  6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

VGF  6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

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