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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor
Gallium antimonide (GaSb) is a very important III-V direct bandgap semiconductor material. It is a key material for Class II superlattice uncooled medium-long-wave infrared detectors and focal plane arrays; uncooled medium-long-wave infrared detectors It has the advantages of long life, light weight, high sensitivity and high reliability. The product is widely used in infrared lasers, infrared detectors, infrared sensors and thermal photovoltaic cells.
The main growth methods of GaSb single crystal materials include traditional liquid-sealed straight-drawing technology (LEC), mobile heating/vertical gradient solidification (VGF)/vertical Bridgman technology.
2-4inch or customized | |||||||
specification | |||||||
single crystal | dope | type | Ion carrier concentration cm-3 | mobility rate (cm2/V.s) | MPD(cm-2) | SIZE | |
GaSb | no | I | (1-2)*1017 | 600-700 | <1*104 | Φ2″×0.5mm Φ3″×0.5mm | |
GaSb | Zn | P | (5-100) *1017 | 200-500 | <1*104
| Φ2″×0.5mm Φ3″×0.5mm | |
GaSb | Te | N | (1-20)*1017 | 2000-3500 | <1*104 | Φ2″×0.5mm Φ3″×0.5mm | |
SIZE(mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mmCan be customized | ||||||
Ra | Surface roughness(Ra):<=5A | ||||||
polish | single or double side polished | ||||||
package | 100 grade cleaning plastic box under 1000 grade cleaning room |
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.