SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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3inch/4inch/2inch 4H-N/semi transparent SiC crystal ingot for optical widows lens after polished
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
Applications
III-V Nitride Deposition Optoelectronic Devices
High-Power Devices High-Temperature Devices High-Frequency Power Devices
SILICON CARBIDE MATERIAL PROPERTIES
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
2 -6inch diameter Silicon Carbide (SiC) ingot specification1
| Grade | Production Grade | Research Grade | Dummy Grade | |
| Diameter | 50.8/76.2/100/150mm±0.38mm | |||
| Thickness | 6-15mm | |||
| Wafer Orientation | On axis : <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward 1120 ±0.5° for 4H-N/4H-SI | |||
| Micropipe Density | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |
| Resistivity | 4H-N | 0.015~0.028 Ω·cm | ||
| 6H-N | 0.02~0.1 Ω·cm | |||
| 4/6H-SI | >1E5 Ω·cm | (90%) >1E5 Ω·cm | ||
| Primary Flat | {10-10}±5.0° | |||
| Primary Flat Length | 15.9 mm±1.7 mm | |||
| Secondary Flat Length | 8.0 mm±1.7 mm | |||
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4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
| 6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
About ZMKJ Company
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
Our Relation Products
Sapphire wafer＆ lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball/ Gap wafers
FAQ:
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.
Q: What's the way of shipping and cost and pay term ?
A:(1) We accept 100％ T/T In advance by DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 2pcs.
(2) For customized products, the MOQ is 10pcs up.